Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
نویسندگان
چکیده
منابع مشابه
Introduction to (plasma-enhanced) atomic layer deposition
Film growth by the atomic layer deposition (ALD) method relies on alternate pulsing of the precursor gases and vapors into a vacuum chamber and their subsequent chemisorption on the substrate surface (Fig. 1) [1,2]. The different steps in the process are saturative such that ALD film growth is self-limiting yielding one submonolayer of film per deposition cycle. ALD has some unique characterist...
متن کاملDirect Growth of Al2O3 on Black Phosphorus by Plasma-Enhanced Atomic Layer Deposition
Growing high-quality and uniform dielectric on black phosphorus is challenging since it is easy to react with O2 or H2O in ambient. In this work, we have directly grown Al2O3 on BP using plasma-enhanced atomic layer deposition (PEALD). The surface roughness of BP with covered Al2O3 film can reduce significantly, which is due to the removal of oxidized bubble in BP surface by oxygen plasma. It w...
متن کاملS passivation of GaAs and band bending reduction upon atomic layer deposition of HfO2/Al2O3 nanolaminates
deposition of HfO2/Al2O3 nanolaminates F. S. Aguirre-Tostado, M. Milojevic, K. J. Choi, H. C. Kim, C. L. Hinkle, E. M. Vogel, J. Kim, T. Yang, Y. Xuan, P. D. Ye, and R. M. Wallace Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75083, USA School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indi...
متن کاملCharacterization of atomic layer deposition HfO2, Al2O3, and plasma- enhanced chemical vapor deposition Si3N4 as metal–insulator–metal capacitor dielectric for GaAs HBT technology
Characterization was performed on the application of atomic layer deposition (ALD) of hafnium dioxide (HfO2) and aluminum oxide (Al2O3), and plasma-enhanced chemical vapor deposition (PECVD) of silicon nitride (Si3N4) as metal–insulator–metal (MIM) capacitor dielectric for GaAs heterojunction bipolar transistor (HBT) technology. The results show that the MIM capacitor with 62 nm of ALD HfO2 res...
متن کاملAtomic layer deposition for fabrication of HfO2/Al2O3 thin films with high laser-induced damage thresholds
Previous research on the laser damage resistance of thin films deposited by atomic layer deposition (ALD) is rare. In this work, the ALD process for thin film generation was investigated using different process parameters such as various precursor types and pulse duration. The laser-induced damage threshold (LIDT) was measured as a key property for thin films used as laser system components. Re...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
سال: 2014
ISSN: 0734-2101,1520-8559
DOI: 10.1116/1.4853075